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Phosphine gas and Arsine gas.png
Phosphine gas and Arsine gas.png

Arsine gas

Product Name:Arsine gas for semiconductor application
Purity: 99.999%~99.99995% Package: 47L CS or AL cylinder CAS No.: 7784-42-1 Class: 2.3(2.1)

Ultra-High Purity Arsine(AsH3) Gas

Our Ultra-High Purity (UHP) Arsine (AsH3) is a premium electronic specialty gas engineered specifically for the stringent demands of advanced semiconductor manufacturing, high-speed optoelectronics, and photovoltaic cell production.

Through meticulous synthesis and multi-stage cryogenic purification, we provide arsine that minimizes critical moisture, oxygen, and metallic impurities, ensuring exceptional process stability and maximizing wafer yield across sensitive epitaxial layers.

Technical Specifications & Performance

Parameter Specification
Chemical Formula AsH3
Purity Options 99.999% (5N) / 99.9999% (6N)
Primary Applications n-type silicon doping, MOCVD Epitaxial Growth, Ion Implantation
CAS No. 7784-42-1

Industry Benchmark Alignment

We manufacture and purify our arsine gas to meet or exceed the rigorous quality and consistency standards established by global industry leaders:

  • Purity & Consistent Yields: Match the ultra-high purity electronic-grade standards of Nata, ensuring seamless integration into III-V compound semiconductor lines and high-brightness LED manufacturing.

  • Bulk & Specialized Supply: Aligned with the high-volume reliability, rigorous logistics safety, and global supply chain standards of Linde and Air Liquide

  • Advanced Packaging Compatibility: Fully compatible with standard high-pressure cylinder configurations as well as sub-atmospheric safe delivery systems (SDS/VAC) similar to those pioneered by Entegris, minimizing operational risk and optimizing gas cabinet safety.

Key Applications

  • Compound Semiconductors (III-V): The primary arsenic precursor for growing Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs), and Aluminum Gallium Arsenide (AlGaAs) crystalline layers via Metalorganic Chemical Vapor Deposition (MOCVD).

  • Semiconductor Doping: Essential source for n-type doping in silicon epitaxial growth and diffusion processes.

  • Ion Implantation: Extremely stable performance in ion sources for precise subsurface depth profiling in high-frequency RF devices and power semiconductors.

Safe Packaging & Delivery Options

Arsine is a highly toxic and flammable gas requiring uncompromising safety protocols. We offer tailored packaging solutions designed to integrate seamlessly into your existing gas distribution architecture:

  • High-pressure carbon steel or aluminum cylinders with ultra-clean, passivated internal surfaces to ensure long-term stability.

  • Advanced valve configurations (including tied-diaphragm and DISS connections) to prevent micro-leakage.

  • Customized blending options (e.g., AsH3 diluted in Ultra-High Purity Hydrogen, Helium, or Nitrogen) tailored to your specific mass flow controller (MFC) calibrations.

Secure Your Supply Chain

Quality Assurance: Every cylinder is shipped with a lot-specific Certificate of Analysis (CoA) generated via high-sensitivity Gas Chromatography (GC) and ICP-MS analysis.

Request a Quotation or Technical Consultation

Looking to qualify a reliable, high-purity AsH3 source for your production line, or need custom dilution specs for high-speed device fabrication? Our global logistics and technical engineering teams are ready to assist.